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| KSC2383 KSC2383 Color TV Audio Output & Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 160 160 6 1 0.5 900 150 -55 ~ 150 Units V V V A A mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol ICBO IEBO BVCEO hFE VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=150V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 VCE=5V, IC=200mA IC=500mA, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCB=10V, IE=0, f=1MHz 0.45 20 100 20 160 60 320 1.5 0.75 V V MHz pF Min. Typ. Max. 1 1 Units A A V hFE Classification Classification hFE R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 (c)2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2383 Typical Characteristics 1.4 Ic[mA], COLLECTOR CURRENT 1.2 EMITTER COMMON o Ta=25 C IB = 15mA 1000 EMITTER COMMON 1.0 hFE, DC CURRENT GAIN IB = 10mA IB = 6mA V CE=10V 100 VCE=5V 0.8 IB = 4mA 0.6 IB = 3mA IB = 2.5mA IB = 2mA IB = 1.5mA IB = 1mA IB = 0.5mA 10 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 1 EMITTER COMMON Ta = 25 C o EMITTER COMMON T a = 25 C o hFE, DC CURRENT GAIN 0.1 V CE=10V 100 IC/IB=10 IC/IB=5 VCE=5V V CE=1V 0.01 10 100 1000 1E-3 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage 1.0 1000 EMITTER COMMON IC/IB=10 EMITTER COMMON f = 1MHz Ta = 25 C o IC[A], COLLECTOR CURRENT 0.8 Cob[pF], CAPACITANCE 0.2 0.4 0.6 0.8 1.0 100 0.6 0.4 10 0.2 0.0 0.0 1 1 10 100 1000 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC2383 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 10 EMITTER COMMON Ta = 25 C o IC MAX. (Pulse) IC[A], COLLECTOR CURRENT 1 10 0m s 10 s 1m s m 100 IC MA X. = 1A DC 0.1 Ta =2 10 5 C o 0.01 1 1 10 100 1000 1E-3 1 10 100 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation VCEO MAX. Rev. B1, September 2002 KSC2383 Package Dimensions TO-92L 4.90 0.20 8.00 0.20 1.70 0.20 1.00 0.10 0.70MAX. 0.80 0.10 1.00MAX. 13.50 0.40 0.50 0.10 1.27TYP [1.27 0.20] 2.54 TYP 0.45 0.10 1.45 0.20 3.90 0.20 3.90 0.20 0.45 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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